PART |
Description |
Maker |
LS26500 |
3.6 V Primary lithium-thionyl chloride High energy density C-size bobbin cell
|
saftbatteries
|
UPS122406 |
Its characteristics are high energy density, small footprint and high discharge efficiency.
|
CSB Battery Co., Ltd.
|
SCFS12000 SCFS10000 SCFS2000 SCFS4000 SCFS6000 SCF |
1.5 A, 4000 V, SILICON, RECTIFIER DIODE FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY High Voltage,High Density Fast Recovery Rectifier(反向电压4000V,温55℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压6000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压12000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压2000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压10000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(????靛?12000V锛?俯搴?5???骞冲??存??垫?1.5A,楂??锛??瀵?害锛?揩???澶??娴??)
|
Semtech Corporation
|
CBRLDSH2-40 CBRLDSH2-40-15 |
SURFACE MOUNT HIGH DENSITY HIGH DENSITY SCHOTTKY BRIDGE RECTIFIER
|
Central Semiconductor C...
|
ISPLSI2128E-100LT176 ISPLSI2128E-135LT176 ISPLSI21 |
In-SystemProgrammableSuperFASTHighDensityPLD In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176 In-System Programmable SuperFAST High Density PLD In-System Programmable SuperFAST⑩ High Density PLD In-System Programmable SuperFAST?/a> High Density PLD
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
|
SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存??? 5.5 A, 16000 V, SILICON, RECTIFIER DIODE High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V,温5℃时平均整流电流5.5A,高压,大电流,高密度,标准恢复整流 STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
|
Semtech Corporation
|
DK50-1.0 DK50-1.0M DK44-1.0 DK44-1.0M DK60-1.0 DK6 |
1.0mm High Density FLEX (300V, 105隆?C) 1.0mm High Density FLEX (300V, 105掳C) 1.0mm High Density FLEX (300V, 105°C)
|
Yamaichi Electronics Co., Ltd. http://
|
MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS 7 E-FET High Energy Power FET From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
ATV750 ATV750-20DM ATV750-20DM_883 ATV750-20GM ATV |
THERMISTOR GLASS 250 OHM DO-35 UV PLD, 25 ns, CDIP24 THERMISTOR GLASS 1K OHM DO-35 OT PLD, 25 ns, PDIP24 THERMISTOR GLASS 10K OHM DO-35 OT PLD, 25 ns, PDIP24 THERMISTOR GLASS 30K OHM DO-35 UV PLD, 25 ns, CDIP24 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PDIP24 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PDSO24 High Density UV Erasable Programmable Logic Device UV PLD, 20 ns, CDIP24 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PQCC28 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, CQCC28 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, CDIP24 High Density UV Erasable Programmable Logic Device OT PLD, 25 ns, PDIP24
|
ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
|
STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率MOS晶体管(不适用沟道增强模式高密度功率马鞍山晶体管) N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
ISPLSI5512VA-70LB388 ISPLSI5512VA-70LB272 ISPLSI55 |
Electrically-Erasable Complex PLD In-System Programmable 3.3V SuperWIDEHigh Density PLD In-System Programmable 3.3V SuperWIDE High Density PLD In-System Programmable 3.3V SuperWIDE?High Density PLD
|
Lattice Semiconductor Corporation
|